product specification july 1998 discrete semiconductors byv79e series rectifier diodes ultrafast, rugged
semiconductors product specification rectifier diodes byv79e series ultrafast, rugged features symbol quick reference data ? low forward volt drop v r = 150 v/ 200 v ? fast switching ? soft recovery characteristic v f 0.9 v ? reverse surge capability ? high thermal cycling performance i f(av) = 14 a ? low thermal resistance i rrm 0.2 a t rr 30 ns general description pinning sod59 (to220ac) ultra-fast, epitaxial rectifier diodes pin description intended for use as output rectifiers in high frequency switched mode 1 cathode power supplies. 2 anode the byv79e series is supplied in the conventional leaded sod59 tab cathode (to220ac) package. limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit byv79e -150 -200 v rrm peak repetitive reverse voltage - 150 200 v v rwm crest working reverse voltage - 150 200 v v r continuous reverse voltage t mb 145?c - 150 200 v i f(av) average forward current 1 square wave - 14 a = 0.5; t mb 120 ?c i frm repetitive peak forward current t = 25 s; = 0.5; - 28 a t mb 120 ?c i fsm non-repetitive peak forward t = 10 ms - 150 a current t = 8.3 ms - 160 a sinusoidal; with reapplied v rwm(max) i rrm repetitive peak reverse current t p = 2 s; = 0.001 - 0.2 a i rsm non-repetitive peak reverse t p = 100 s - 0.2 a current t stg storage temperature -40 150 ?c t j operating junction temperature - 150 ?c 1. neglecting switching and reverse current losses. esd limiting value symbol parameter conditions min. max. unit v c electrostatic discharge human body model; - 8 kv capacitor voltage c = 250 pf; r = 1.5 k k a 12 1 tab 2 july 1998 1 rev 1.200
semiconductors product specification rectifier diodes byv79e series ultrafast, rugged thermal resistances symbol parameter conditions min. typ. max. unit r th j-mb thermal resistance junction to - - 2 k/w mounting base r th j-a thermal resistance junction to in free air - 60 - k/w ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit v f forward voltage i f = 14 a; t j = 150?c - 0.83 0.90 v i f = 14 a - 0.95 1.05 v i f = 50 a - 1.2 1.4 v i r reverse current v r = v rwm ; t j = 100 ?c - 0.5 1.3 ma v r = v rwm -550 a q s reverse recovery charge i f = 2 a; v r 30 v; -di f /dt = 20 a/ s- 6 15 nc t rr1 reverse recovery time i f = 1 a; v r 30 v; - 20 30 ns -di f /dt = 100 a/s t rr2 reverse recovery time i f = 0.5 a to i r = 1 a; i rec = 0.25 a - 13 22 ns v fr forward recovery voltage i f = 1 a; di f /dt = 10 a/ s-1-v july 1998 2 rev 1.200
semiconductors product specification rectifier diodes byv79e series ultrafast, rugged fig.1. definition of t rr1 , q s and i rrm fig.2. definition of v fr fig.3. circuit schematic for t rr2 fig.4. definition of t rr2 fig.5. maximum forward dissipation p f = f(i f(av) ); square current waveform where i f(av) =i f(rms) x d. fig.6. maximum forward dissipation p f = f(i f(av) ); sinusoidal current waveform where a = form factor = i f(rms) / i f(av) . q s 100% 10% time di dt f i r i f i rrm t rr i = 1a r rec i = 0.25a 0a trr2 0.5a if ir time time v f v fr v f i f 0 5 10 15 20 25 0 5 10 15 20 0.5 0.2 0.1 byv79 if(av) / a pf / w d = 1.0 tmb(max) / c 150 140 130 120 110 vo = 0.744 v rs = 0.0112 ohms d = t p t p t t t i shunt current to scope d.u.t. voltage pulse source r 0 5 10 15 0 5 10 15 1.9 2.2 2.8 4 byv79 if(av) / a pf / w tmb(max) / c 150 140 130 120 a = 1.57 vo = 0.744 v rs = 0.0112 ohms july 1998 3 rev 1.200
semiconductors product specification rectifier diodes byv79e series ultrafast, rugged fig.7. maximum t rr at t j = 25 ?c. fig.8. maximum i rrm at t j = 25 ?c. fig.9. typical and maximum forward characteristic i f = f(v f ); parameter t j fig.10. maximum q s at t j = 25 ?c. fig.11. transient thermal impedance; z th j-mb = f(t p ). 1 10 trr / ns 1 10 100 1000 dif/dt (a/us) if=1a if=10a 100 1.0 10 100 qs / nc 1.0 10 100 -dif/dt (a/us) 1000 if=10a 5a 2a 10 1 0.1 0.01 irrm / a 1 10 100 -dif/dt (a/us) if=10a if=2a 1us 10us 100us 1ms 10ms 100ms 1s 10s 0.001 0.01 0.1 1 10 byv79e pulse width, tp (s) transient thermal impedance, zth j-mb (k/w) d = t p t p t t p t d 0 2 60 50 40 30 20 10 0 max typ tj = 150 c tj = 25 c 1.0 0.5 if / a vf / v 1.5 july 1998 4 rev 1.200
semiconductors product specification rectifier diodes byv79e series ultrafast, rugged mechanical data dimensions in mm net mass: 2 g fig.12. sod59 (to220ac). pin 1 connected to mounting base. notes 1. refer to mounting instructions for to220 envelopes. 2. epoxy meets ul94 v0 at 1/8". 10,3 max 3,7 2,8 3,0 3,0 max not tinned 1,3 max (2x) 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 0,9 max (2x) 13,5 min 5,08 12 july 1998 5 rev 1.200
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